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專利國別 |
美國 |
發表日期 |
2014-08-14 10:24:45 |
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本校案號 |
P98033A |
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專利名稱 |
氧化鋅奈米柱薄膜及其製備方法「ZINC OXIDE NANOROD THIN FILM AND METHOD FOR MAKING SAME」 |
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發明人 |
丁初稷,李長紘,郭致佑,王祥辰 |
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所屬院 |
工學院 |
提案單位 |
光機電整合工程研究所 |
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類型 |
發明 |
專利權人 |
國立中正大學 |
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申請號 |
12/778,755 |
申請日期 |
2010-05-12 |
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公開號 |
US 2011-0280796 A1 |
公日期 |
2011-11-17 |
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證書號 |
US 8,268,287 B2 |
核准日期 |
2012-09-18 |
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國際分類號 |
C01G-009/02(2006.01) |
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專利權期間 |
2010.05.12~2030.05.12(延長231天至2030.12.29) |
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專利摘要 |
The zinc oxide nanorod thin film in accordance with the present invention is highly condensed and has ideal photoeletric properties. The method for making the zinc oxide nanorod thin film has two steps:forming a zinc oxide seed layer comprising multiple crystals each having a grain size of 1-100nm on a basal plate and preparing a zinc oxide nanorod thin film growing solution in which the zinc oxide seed layer ia allowed to grow a zinc oxide crystal columnar layer at a growing temperature ranging from 50 to 100C. for a growing time ranging from 0.5 to 10 hours to form a zinc oxide nanorod thin film,wherein the zinc oxide nanorod thin film growing solution is a 0.001-0.1M aqueous zinc ion solution comprising hexamethyleneteramine. |
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