專利國別

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發表日期

2015-07-28 16:58:48

本校案號

P99012A

專利名稱

三極型場發射裝置及其製作方法「TRIOED-TYPE FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME」

發明人

李元堯、游孟潔、曾俊龍、巫宏智、阮彥銘、林旺樺

所屬院

工學院

提案單位

化學工程學系暨研究所

類型

發明

專利權人

國立中正大學

申請號

13/419,821

申請日期

2012-03-14

公開號

0

公開日期

2013-01-17

證書號

US 9,018,831 B2

核准日期

2015-04-28

國際分類號

H05B-041/16(2006.01)；H01J-063/04(2006.01)

專利權期間

2012.03.14~2032.03.14(延長565天至2033.09.30)

專利摘要

A triode-type field emission device and method of manufacturing the same, suitable for use in screen print process of curved or planar substrate, comprising the following steps: firstly, form a cathode and a gate on a cathode substrate at the same time by means of screen printing, and a gap is located between gate and cathode, to avoid short circuit or interference; next, form a hedgehog-shape field emission layer on at least said cathode; then, form a transparent conductive layer and a light emitting layer sequentially on an anode substrate; and finally, dispose cathode substrate and anode substrate in parallel and spaced apart, and package them into a triode-type field emission device. Bias of cathode and gate can be controlled to achieve local adjustment of light. Also, gate may serve as an emitter, to increase field emission efficiency and its service life.

圖示