Print - 【專利核准公告】P105022A-靜態隨機存取記憶體細胞元陣列、靜態隨機存取記憶體細胞元及其操作方法「STATIC ... ACCESS MEMORY CELL ARRAY, STATIC RANDOM ACCESS MEMORY CELL ... OPERATING ... THEREOF」(已終止維護)

【專利核准公告】P105022A-靜態隨機存取記憶體細胞元陣列、靜態隨機存取記憶體細胞元及其操作方法「STATIC ... ACCESS MEMORY CELL ARRAY, STATIC RANDOM ACCESS MEMORY CELL ... OPERATING ... THEREOF」(已終止維護)

專利核准-上隔線

專利國別	美國	發表日期	2019-09-05 16:29:04
本校案號	P105022A
專利名稱	靜態隨機存取記憶體細胞元陣列、靜態隨機存取記憶體細胞元及其操作方法「STATIC RANDOM ACCESS MEMORY CELL ARRAY, STATIC RANDOM ACCESS MEMORY CELL AND OPERATING METHOD THEREOF」
發明人	王進賢、簡永溱
所屬院	工學院	提案單位	晶片系統研究中心
類型	發明	專利權人	國立中正大學
申請號	15/655,914	申請日期	2017-07-21
公開號	0	公開日期	2018-09-13
證書號	US 10,127,976 B2	核准日期	2018-11-13
國際分類號	G11C-011/00(2006.01)；G11C-011/419(2006.01)
專利權期間	2017.07.21~2037.07.21(延長15天至2037.08.05)
專利摘要	A static random access memory cell includes a controlling signal line unit, a latch and an access transistor unit. The first bottom transistor unit is controlled by the controlling signal line unit to change voltage levels of the first pseudo node and the second pseudo node. The second bottom transistor unit is controlled by the first internal node to perform connection and disconnection between the controlling signal line unit and the second pseudo node, and the second bottom transistor unit is controlled by the second internal node to perform connection and disconnection between the controlling signal line unit and the first pseudo node. The access transistor unit is controlled by the controlling signal line unit to perform connection and disconnection between the controlling signal line unit, the first pseudo node and the second pseudo node.
圖示

【專利核准公告】P105022A-靜態隨機存取記憶體細胞元陣列、靜態隨機存取記憶體細胞元及其操作方法「STATIC RANDOM ACCESS MEMORY CELL ARRAY, STATIC RANDOM ACCESS MEMORY CELL AND OPERATING METHOD THEREOF」

專利核准-下隔線