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專利國別 |
美國 |
發表日期 |
2022-11-30 15:33:40 |
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本校案號 |
P109001US |
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專利名稱 |
記憶體裝置及其操作方法｢LOW-VOLTAGE LOW-POWER MEMORY DEVICE WITH READ, WRITE, HOLD, AND STANDBY ASSIST VOLTAGES AND OPERATION METHOD THEREOF｣ |
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發明人 |
王進賢、劉建彤、王皓平 |
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所屬院 |
工學院 |
提案單位 |
晶片系統研究中心 |
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類型 |
發明 |
專利權人 |
國立中正大學 |
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申請號 |
17/073,672 |
申請日期 |
2020.10.19 |
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公開號 |
US 20220036942 A1 |
公開日期 |
2022.02.03 |
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證書號 |
US 11,404,112 B2 |
核准日期 |
2022.08.02 |
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國際分類號 |
G11C 11/417(2006.01) |
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專利權期間 |
2020.10.19~2040.10.19 |
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專利摘要 |
A memory device and an operation method thereof is disclosed. The memory device includes a static random access memory (SRAM) cell, a power-supply assist-voltage generator circuit, a source assist-voltage generator circuit, and a word-line assist-voltage generator circuit. The power-supply assist-voltage generator circuit, the source assist-voltage generator circuit, and the word-line assist-voltage generator circuit lower the effective supply voltage for un-accessed rows of memory cells in the hold mode, increase the effective supply voltage for accessed memory cells in the active mode, and lower the effective supply voltage further for all the SRAM cells in the standby mode to achieve a solution for active and standby power reduction besides achieving the stability and noise margins. |
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圖示 |
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