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專利國別 |
美國 |
發表日期 |
2023-11-10 10:30:47 |
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本校案號 |
P110022US |
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專利名稱 |
記憶體裝置及其操作方法 |
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發明人 |
王進賢、劉建彤、劉知融 |
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所屬院 |
工學院 |
提案單位 |
晶片系統研究中心 |
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類型 |
發明 |
專利權人 |
國立中正大學 |
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申請號 |
17/508,768 |
申請日期 |
2021.10.22 |
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公開號 |
US20230074722A1 |
公開日期 |
2023.03.09 |
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證書號 |
US 11,776,621 B2 |
核准日期 |
2023.10.03 |
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國際分類號 |
G11C 11/413(2006.01); G11C 7/22(2006.01) |
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專利權期間 |
2021.10.22～2042.04.20 |
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專利摘要 |
The present invention discloses a memory device and an operation method thereof. The memory device includes a static random access memory cell and a power supply auxiliary circuit connected to the static random access memory cell. The power supply auxiliary circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor receives a power supply voltage. The control ends of the first transistor and the second transistor are connected to each other. The third transistor uses a first control signal to switch and connect the control end and the connection end of the second transistor. The fourth transistor uses a second control signal to drive the control end of the second transistor so as to receive a system ground voltage. The fifth transistor uses a third control signal to drive the control end of the first transistor to receive the power supply voltage so as to increase the write margin or reduce the leakage current in a standby mode. |
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圖示 |
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