【專利核准公告】P112008US-可重構反射陣列結構及具可重構反射陣列結構之控制電路「RECONFIGURABLE REFLECTARRAY STRUCTURE AND CONTROL CIRCUIT HAVING RECONFIGURABLE REFLECTARRAY STRUCTURE」

專利核准-上隔線

專利國別

  美國   

發表日期

2026-05-14

本校案號

P112008US

專利名稱

可重構反射陣列結構及具可重構反射陣列結構之控制電路「RECONFIGURABLE REFLECTARRAY STRUCTURE AND CONTROL CIRCUIT HAVING RECONFIGURABLE REFLECTARRAY STRUCTURE」

發明人

林士程、張盛富、張嘉展、林元駿、史庭豪

所屬院

工學院

提案單位

電信研究中心

類型

發明

專利權人

國立中正大學

申請號

18/429,446

申請日期

2024.02.01

公開號

US20250055188A1

公開日期

2025.02.13

證書號

US 12,519,227 B2

核准日期

2026.01.06

國際分類號

H01Q 3/46(2013.01); H01Q 15/002(2013.01); H01Q 1/241(2013.01); H01Q 3/46(2013.01)

專利權期間

2024.02.01~2044.02.01(延長163天至2044.07.13)

專利摘要

A Reconfigurable ReflectArray (RRA) structure includes a P-Intrinsic-N (P-I-N) diode and a metal circuit. The metal circuit includes a first metal member and a second metal member. The first metal member is coupled to one end of the P-I-N diode. The second metal member is coupled to another end of the P-I-N diode. One of the first metal member and the second metal member includes a first radiating portion and a second radiating portion. The first radiating portion is located between the P-I-N diode and the second radiating portion. The first radiating portion has a first length. The second radiating portion has a second length. The first length is different from the second length.

圖示

【專利核准公告】P112008US-可重構反射陣列結構及具可重構反射陣列結構之控制電路「RECONFIGURABLE REFLECTARRAY STRUCTURE AND CONTROL CIRCUIT HAVING RECONFIGURABLE REFLECTARRAY STRUCTURE」

專利核准-下隔線