專利國別

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發表日期

2014-10-14 10:43:18

本校案號

P100016A

專利名稱

適用於低工作電壓之記憶體電路「MEMORY CIRCUIT PROPERLY WORKABLE UNDER LOW WORKING VOLTAGE」

發明人

王進賢、張倍耀

所屬院

工學院

提案單位

電機工程學系暨研究所

類型

發明

專利權人

國立中正大學

申請號

13/477,437

申請日期

2012-05-22

公開號

0

公開日期

2013-11-28

證書號

US 8,743,592 B2

核准日期

2014-06-03

國際分類號

G11C-011/412(2006.01)

專利權期間

2012.05.22~2032.05.22 (延長234天至2033.01.11)

專利摘要

A memory circuit properly workable under low working voltage includes a plurality of write word lines, a plurality of write bit lines, a plurality of read/write word lines, a plurality of read/write bit lines, a plurality of read/write inverted word lines, a plurality of virtual voltage source circuits, a plurality of virtual ground circuits, and a plurality of asymmetrical RAM cells constituting a cell array. The asymmetrical RAM cells are formed of seven transistors, five of which are NMOS transistors and two of which are PMOS transistors. The virtual voltage power source circuit and the virtual ground circuit can reinforce the write-in and read abilities under low working voltage to make the write-in and read actions more stable, decrease leakage current, and lower power consumption.

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