專利國別

  美國   

發表日期

2014-12-30 10:04:22

本校案號

P101011A

專利名稱

硒化銅奈米粉體和電泳沉積硒化銅薄膜之製造方法「METHOD FOR MAKING CU2-XSE NANOPARTICLE AND METHOD FOR MAKING DEPOSITED CU2-XSE THIN FILM BY ELECTROPHORESIS」

發明人

丁初稷、李文淵

所屬院

工學院

提案單位

光機電整合工程研究所

類型

發明

專利權人

國立中正大學

申請號

13/547,301

申請日期

2012-07-12

公開號

0

公開日期

2014-01-16

證書號

US 8,673,672 B2

核准日期

2014-03-18

國際分類號

B05D-005/12(2006.01)；H01L-031/0264(2006.01)

專利權期間

2012.07.12~2032.07.12

專利摘要

In the present invention, copper(I) selenide (Cu.sub.2-xSe) nanoparticles are fabricated by pyrolysis in an inert atmosphere. Uniformly dispersed Cu.sub.2-xSe particles are synthesized by altering Cu/Se ratio, the concentration of Se Precursors (TOP Se), reaction time and temperature. Analysis by inductively coupled plasma atomic emission spectroscopy (ICP-AES) of said Cu2-xSe nanoparticles reveals that the composition of the nanoparticles is Cu 1.95Se, wherein x=0.05. In addition, Cu.sub.2-xSe is dissolved in ethanol to deposit thin films by electrophoretical deposition (EPD) in an inert atmosphere, wherein a positive electrode and a negative electrode are employed. The positive electrode is made of stainless steel plate and the negative electrode is made of indium tin oxide on a glass substrate. Investigations on properties and surface morphology thereof in different electrophoretical conditions are carried out. The rate of EPD is found to significantly influence the quality of thin films.

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