【可授權專利公告】P112008US-可重構反射陣列結構及具可重構反射陣列結構之控制電路「RECONFIGURABLE REFLECTARRAY STRUCTURE AND CONTROL CIRCUIT HAVING RECONFIGURABLE REFLECTARRAY STRUCTURE」

|
專利國別 |
美國 |
發表日期 |
2026-05-14 |
|
|
本校案號 |
P112008US |
|
||
|
專利名稱 |
可重構反射陣列結構及具可重構反射陣列結構之控制電路「RECONFIGURABLE REFLECTARRAY STRUCTURE AND CONTROL CIRCUIT HAVING RECONFIGURABLE REFLECTARRAY STRUCTURE」 |
|
||
|
發明人 |
林士程、張盛富、張嘉展、林元駿、史庭豪 |
|
||
|
所屬院 |
工學院 |
提案單位 |
電信研究中心 |
|
|
類型 |
發明 |
專利權人 |
國立中正大學 |
|
|
申請號 |
18/429,446 |
申請日期 |
2024.02.01 |
|
|
公開號 |
US20250055188A1 |
公開日期 |
2025.02.13 |
|
|
證書號 |
US 12,519,227 B2 |
核准日期 |
2026.01.06 |
|
|
國際分類號 |
H01Q 3/46(2013.01); H01Q 15/002(2013.01); H01Q 1/241(2013.01); H01Q 3/46(2013.01) |
|
||
|
專利權期間 |
2024.02.01~2044.02.01(延長163天至2044.07.13) |
|
||
|
專利摘要 |
A Reconfigurable ReflectArray (RRA) structure includes a P-Intrinsic-N (P-I-N) diode and a metal circuit. The metal circuit includes a first metal member and a second metal member. The first metal member is coupled to one end of the P-I-N diode. The second metal member is coupled to another end of the P-I-N diode. One of the first metal member and the second metal member includes a first radiating portion and a second radiating portion. The first radiating portion is located between the P-I-N diode and the second radiating portion. The first radiating portion has a first length. The second radiating portion has a second length. The first length is different from the second length. |
|
||
|
圖示 |
||||



